Structure, Energy Storage and Stability of Nd2/3(Sc0.5Nb0.5)O3‐Doped BNT‐Based Ceramics Under Low Electric Fields

Abstract

Pursuing advanced dielectric ceramics with remarkable energy storage density at low electric field (E) is pivotal to achieving miniaturization in integrated circuits. In order to simultaneously obtain high recoverable energy storage density (Wrec), remarkable energy storage efficiency (η), and enhanced stability under low E, a synergistic optimization strategy that promote grain refinement, increase the bandgap width, and induce nanoscale domains was proposed. A series of (1−x)(Bi0.5Na0.5)0.7Sr0.3TiO3−xNd2/3(Sc0.5Nb0.5)O3 [(1−x)BNST−xNSN, x = 0.06 ∼ 0.12] ceramics were obtained by solid‐state reaction. It is evident from the results that the enhanced insulating properties and reduced domain size improved the ESP. The x = 0.10 ceramics achieved a high Wrec of 3.71 J/cm3 and an ultra‐high η of 92.1% under 260 kV/cm. The optimized ceramics exhibit exceptional dielectric temperature stability (−51°C to 317°C), outstanding frequency stability (5–200 Hz, ΔWrec ∼ 6.1%, Δη ∼ 4.6%) and outstanding cycling stability (101–106 cycles, ΔWrec ∼ 6.5%, Δη ∼ 1.1%) due to the induced nanoscale domains. The x = 0.10 ceramics also demonstrate high‐power density of 262 MW/cm3 and ultra‐fast discharge rate of 45 ns, thereby offering significant potential for deployment in pulsed power systems.