Oct 2026· Advances in Materials· pp.
e75418
· 0 citations· 62 references
Medicine
Abstract
High-temperature radiative ceramics require broadband infrared emission and stable structures, but the defects that enhance emission can also weaken oxide lattices. Here, we regulate oxygen vacancies in (MnCrFeNiCu)3O4, a high-entropy spinel oxide (HEO), by vacuum annealing without changing the nominal cation composition. This approach regulates oxygen nonstoichiometry without introducing an additional cation-substitution variable. The binary Mn-Cr reference has band-averaged emissivities of 0.668 and 0.726 over 0.78-2.5 and 2.5-16 µm, respectively. Pristine HEO increases these values to 0.919 and 0.863, while the optimized HEO-OV-5 h reaches 0.932 and 0.902. Multication incorporation broadens electronic states near the band edges. Oxygen removal creates vacancy-derived states, redistributes charge, and changes local M─O coordination. The vacancy-derived states are consistent with localized d-d excitation, intervalence charge transfer, and polaron-related absorption, while changes in M─O coordination broaden vibrational absorption. Together, these electronic and local structural changes are consistent with the enhanced infrared emissivity. The spinel framework and high emissivity remain largely preserved after annealing at 1000°C for 5 h. These results show that oxygen vacancies can be regulated within a stable multication spinel to combine broadband infrared emission with high-temperature stability.
The development of stable, durable cathodes with high oxygen reduction reaction (ORR) activity remains a critical challenge in solid oxide fuel cell (SOFC) research. This work employs a Sn-In co-doping strategy to synthesize a cathode material with the nominal composition Ba(Co0.7Fe0.3)0.8(Sn0.5In0.5)0.2O3-δ. The co‑do...
Han-Fei Zhuge, Jia-Rong Dai, Hao-Cong Wang et al.· Small· 0 citations
Bismuth-layer-structured ferroelectrics (BLSFs) are promising candidates for high-temperature piezoelectric applications owing to their intrinsically high Curie temperatures. However, their practical implementation is hindered by the relatively low piezoelectric activity, which is largely associated with oxygen-vac...
Jun-Hui Tan, Xuan-Yu Chen, Yu-Xing Dai et al.· Journal of Advanced Ceramics· 0 citations
The vacancy–oxygen (VOi) center is an important defect in Si, introducing energy levels within the bandgap and acting as a recombination center that degrades device performance. Hydrogen can passivate the VOi center, forming defects such as VOiHi, which modify the electronic structure and produce characteristic infrare...
N. Kuganathan, P. Filippatos, E. Sgourou et al.· AIP Advances· 0 citations
Layered Aurivillius ferroelectrics offer a route to multifunctional band-gap engineering, yet the role of oxygen vacancies in band-edge reconstruction in Fe/Co-modified compositions remains poorly resolved. Here, oxygen annealing of Bi3.25La0.75Ti2.60(Fe0.50,Co0.50)0.40O12 (BLFC4) ceramics widens the optical band gap b...
M. Alkathy, Danilo Kuritza, Lais Conservan Nogueira et al.· ACS Omega· 0 citations
The palmierite oxides are a promising family of ion conductors, and understanding how compositional modification affects their structure and, in turn, their ionic conductivity is pivotal for unlocking high ionic conductivity in these solid electrolytes. Here, we investigate the Sr3V2-xMoxO8+x/2 series (0 ≤ x ≤ 0.4),...
Abdulkadir Olatunbosun Biffo, Anastasia K. Lavrinenko, Hai-Lin Ma et al.· Chemistry of Materials· 0 citations
Vacancy‐filling strategy not only expands the Heusler family but also efficiently optimizes their thermoelectric performance. In this work, Cr atoms with 6 valence electrons are filled into the vacant 4d site of ZrCoBi
0.8
Sn
0.2
, preserving its semiconducting behavior. A small amount of Cr filling does not al...
Hao-Jin An, Zhi-Wei Chen, Zi-Rui Dong et al.· Advanced Functional Material...· 0 citations
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