Anti-altermagnets (AAMs) are a recently identified class of layered magnetic materials where opposite spin-splitting in adjacent layers creates a globally spin-degenerate band structure, rendering conventional spectroscopic detection highly difficult. In this paper, we theoretically demonstrate an all-electrical method to manipulate and probe this hidden magnetic order using a dual-gated transport junction. By applying a perpendicular displacement field, we break the spatial inversion symmetry of the lattice, explicitly lifting the global spin degeneracy. We attach ferromagnetic (FM) leads on either side of the AAM. Using quantum transport calculations, we show that this gate-induced spin-splitting manifests as a strongly asymmetric tunnel magnetoresistance (TMR) as a function of the lead magnetization. We identify specific crystallographic orientations where the TMR retains its symmetry despite the fully split bands, a direct consequence of exact momentum-space compensation. We further reveal that Rashba spin-orbit coupling guarantees robust, highly directional transport asymmetries even in the absence of an explicit chemical potential mismatch between the layers. Our findings establish a clear, electrically tunable framework for exploiting AAMs in next-generation spintronic architectures.
Altermagnets combine vanishing net magnetization with a momentum-dependent spin-split electronic structure, providing a route to spin-polarized carriers without ferromagnetism. Here, we investigate how electronic correlations, doping, uniaxial strain, and interlayer coupling control altermagnetism within a minimal Hubb...
Marnin J. Di Nunzio, F. Lechermann, I. Eremin· 0 citations
Altermagnetism, characterized by momentum-dependent spin-splitting without net magnetization, attracts considerable attention due to its unique symmetry-governed electronic structures and potential applications in spintronic devices. Here, based on first-principles calculations, we identify Cr2WS4 monolayer as a two-di...
Ting-Ting Mi, Ao-Lin Li, Ze-Sen Fu et al.· Journal of Applied Physics· 0 citations
Altermagnets combine spontaneous spin splitting with antiferromagnetic coupling, making them a promising platform for spintronic devices. In this work, we demonstrate that the two-dimensional (2D) Co2MTe4 (M = Mo, W) monolayers are altermagnetic semiconductors with out-of-plane magnetic easy axes, whose unconventional...
In conventional antiferromagnets, local electric environments remain equivalent and combined inversion and time-reversal PT symmetry enforces spin-degenerate bands, whereas altermagnets and related compensated phases realize this inequivalence as long-range order electric environments. Materials with zero net magnetiza...
Daniel D. Rivera, G. M. Dalpian, Carlos Mera Acosta· Journal of Physics: Condense...· 0 citations
α-MnTe is among the earliest discovered altermagnets with experimental evidence of A-type antiferromagnetic order above room temperature and spin-split bands. Here, we conduct a theoretical investigation of its magnetism based on the general symmetry-adaptive tensorial spin model, which not only confirms a Néel tempera...
Bo-Yang Deng, Yu-Zheng Guo, John Robertson et al.· npj Spintronics· 0 citations
Altermagnets simultaneously possess momentum-dependent nonrelativistic spin splitting and zero net magnetization (1-6). Their defining crystalline symmetry connects opposite-spin sublattices in real space and imposes alternating spin polarization on the symmetry-related electronic states in momentum space (1-3). Identi...
