Pre-stress regulation on ferroelectric properties and domain-switching mechanisms of PIN–PMN–PT single crystals with different orientations

Abstract

Relaxor ferroelectric single crystals exhibit outstanding piezoelectric and ferroelectric properties, showing great potential for ultrasonic transducers and nondestructive testing. Pre-stress strongly modulates the domain structure and ferroelectric responses, yet systematic orientation-dependent studies on Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) single crystals are scarce; the mechanisms whereby pre-stress manipulates domain switching and phase transitions to dictate macroscopic ferroelectricity remain unclear. Here, we combine experiments and thermodynamic theory to study [111]-, [011]-, and [001]-oriented rhombohedral PIN–PMN–PT single crystals under various pre-stress directions. In [111]-oriented crystals, pre-stress parallel to the electric field lowers the coercive field while preserving remanent polarization, favoring low-voltage, high-output transducers. Perpendicular pre-stress continuously tunes both quantities and may enable stepwise read–write voltages in ferroelectric memories. In [011]- and [001]-oriented crystals, pre-stress markedly reduces remanent polarization through stress-induced R–T and R–O phase transitions, respectively; parasitic stress should, therefore, be minimized to improve device reliability. These findings clarify stress-regulated domain-switching mechanisms, supporting performance optimization and reliable design of high-performance PIN–PMN–PT devices.