Open access
Sep 2026
Microscopic Stress Analysis of Silicon Carbide Devices Under Overcurrent Conditions in DC Solid‐State Circuit Breakers
During load start‐up, capacitor charging, pulsed‐power output and inverse‐time protection delay in dc solid‐state circuit breakers (DC‐SSCBs), SiC MOSFETs are subjected to short‐duration overcurrent (OC) stress. Ultrahigh gate voltage (UHGV) driving can reduce thermo‐mechanical stress during OC operation. However,...
Bin Yu, Jia-Wei Qin, Liang Chen et al.
· IET Smart Energy Systems · 0 citations