Reliable HCI-Based Programming in V-NAND Flash Memory: Co-optimization of SWL Waveform and Trap-Cut Architecture
Hot carrier injection (HCI)-based programming has emerged as a high-efficiency alternative to conventional Fowler–Nordheim (FN) tunneling for next-generation vertical NAND (V-NAND), yet its practical implementation is severely constrained by coupled physical reliability trade-offs: program disturb, Z-interference, an...