J. R. S. Kulothungan

A Feedback-Enabled Restorable 10T FinFET SRAM for Low-Power and High-Speed Operation at 10 nm

This paper proposes a feedback-enabled 10T FinFET based static random-access memory (SRAM) cell for low-power and high-speed operation in 10-nm technology node. With the scaling up of technology in SRAM, there are issues to consider with regards to power consumption, access delay, leakage, noise sensitivity, and reliab...