Device-physics design rules for wide-temperature enhancement-mode GaN integrated circuits: code and circuit-level results
Code and circuit-level results for the article "Device-physics design rules for wide-temperature enhancement-mode gallium nitride integrated circuits, revealed by transistor-anchored machine learning" (T. M. Mahim, M. M. Rahman, N. Chowdhury; submitted). The probe circuit is a monolithic e-mode GaN-on-SOI fractional-N...