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Author

Nian-Nian Yu

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Oct 2026

Unveiling Phosphorus Vacancy-Mediated Resistive Switching in Cu/HfO2/BP/Pt Memristors: Experimental and First-Principles Investigations

Memristors integrating 2D materials are promising for neuromorphic computing, yet their microscopic resistive switching mechanisms require further clarification. In this study, a Cu/HfO2/BP/Pt memristor was fabricated to investigate its electrical characteristics and conductive filament (CF) dynamics. The device exhi...

Dai-Yang Jiang, Zi-Hao Yan, Chang Cao et al. · 0 citations

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