Oct 2026· Journal of Physical Chemistry C· 0 citations· 73 references
Abstract
Memristors integrating 2D materials are promising for neuromorphic computing, yet their microscopic resistive switching mechanisms require further clarification. In this study, a Cu/HfO2/BP/Pt memristor was fabricated to investigate its electrical characteristics and conductive filament (CF) dynamics. The device exhibits compliance-dependent behavior, enabling unipolar volatile switching at 100 μA and bipolar nonvolatile switching at 200 μA. In nonvolatile mode, it demonstrates a concentrated switching voltage distribution (Vset ≈ −1.491 V, Vreset ≈ 1.669 V), stable endurance exceeding 150 cycles, and an ON/OFF ratio of ∼104. The low- and high-resistance states follow ohmic conduction (a hybrid ohmic conduction of electron capture/decapture under negative bias) and Schottky emission, respectively. Furthermore, first-principles CI-NEB calculations indicate that intrinsic phosphorus vacancies (Vp) within the BP layer facilitate directional Cu+ migration (1.54 eV barrier) and spontaneous Pt atom trapping (0.1 eV barrier). This defect-mediated interfacial interaction promotes stable orbital hybridization, anchoring localized CFs. This work provides experimental and theoretical insights for designing oxide/2D material-based neuromorphic hardware.
Thermal instability remains a fundamental bottleneck in oxide-based resistive random-access memory (RRAM), where elevated operating temperatures invariably increase the high-resistance-state (HRS) leakage current and collapse the ON/OFF switching window, severely limiting reliable deployment. Here, an Au/AgHfO3-x/Al2O3...
Swaraj Mukherjee, M. M. Ganaie, Ayan Chatterjee et al.· Materials Horizons· 0 citations
Two-dimensional materials show great potential as candidates for next-generation memristors. However, research on reconfigurable memristors essential to complex in-memory computing frameworks remains underexplored. Here, to tackle this challenge, a reliable vapor-phase growth method is developed to grow ultrathin nonla...
Jian-Hong Zhang, Jun-Jie Yan, Nan He et al.· Small· 0 citations
Amorphous indium-gallium-zinc oxide (a-IGZO)-based memristors have attracted considerable attention for neuromorphic computing applications owing to their structural uniformity, amorphous-phase stability, CMOS compatibility, and oxygen-vacancy-mediated resistive switching characteristics. However, uncontrolled oxygen-v...
Yu-Bin Kim, Sung-Ho Kim, Dong-Min Kim et al.· ACS Applied Materials and In...· 0 citations
Organic memristors are attracting increasing interest due to their potential in low-cost, flexible, and neuromorphic electronics. Despite ongoing research, the underlying switching mechanisms are not yet fully understood and require further systematic investigation. Herein, we present an ITO/PEDOT: PSS (+DMSO+TsOH) (...
Bioinspired neuromorphic architectures featuring sensory-memory-computing integration offer a highly effective approach to overcoming the traditional von Neumann computing bottleneck. However, existing optoelectronic memristors universally face challenges such as high static power consumption and difficulties in modula...
Yuan-Hui Yang, Yuan-Feng Sun, Kai Hu et al.· Journal of Physical Chemistr...· 0 citations
Resistive switching devices are promising candidates for high-density memory and in-memory computing applications, but sneak-path leakage in crossbar arrays requires selector elements with strong nonlinearity. Here, we demonstrate deterministic switching-mode selection in solution-processed SnSe-based Al/AlOx/SnSe/Ag d...
