Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration
This review establishes a device-to-system perspective on HfO2-based and Hf0.5Zr0.5O2-based ferroelectric memories for in-memory computing and outlines a cross-layer roadmap in which ferroelectric stack engineering, variability-tolerant arrays, precision-scalable architectures, and SoC-level integration are co-optimize...