Transconductance ZTC Bias Study under High Temperatures: Experimental and Analytical Model
This contribution redefines biasing strategies for thermally-tolerant design of analog Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) by demonstrating that transconductance (gm) zero-temperaturecoefficient $\left(\boldsymbol{Z} T C_{\boldsymbol{g} \boldsymbol{m}}\right)$ operation provides int...