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Author

Xi Luo

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Open access Aug 2026

PWM-induced lifetime enhancement in commercial 4H-SiC MOSFET gate oxides and the associated physical mechanisms of interface traps

Silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors are increasingly operated under high-frequency pulse-width-modulated (PWM) gate drive, yet gate-oxide reliability is still qualified almost exclusively under direct-current (DC) stress. This work reports a controlled comparison of gate-oxide...

Jia-Hui Yan, Fa-Ci Cheng, Xi Luo et al. · 0 citations

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