Author

Xiangshui Miao

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Open access Oct 2026

Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers

The development of high-performance p-type monolayer transistors is critical for extending two-dimensional (2D) semiconductors beyond silicon in sub 1-nm technology nodes for complementary metal–oxide–semiconductor (CMOS) circuits. However, insufficient doping and metal-induced gap states (MIGS) during metal deposition...

Lei-Fang Sun, Ting-Ting Gao, Lin Xu et al. · Nature Communications · 0 citations

Oct 2026

Unveiling Phosphorus Vacancy-Mediated Resistive Switching in Cu/HfO2/BP/Pt Memristors: Experimental and First-Principles Investigations

Memristors integrating 2D materials are promising for neuromorphic computing, yet their microscopic resistive switching mechanisms require further clarification. In this study, a Cu/HfO2/BP/Pt memristor was fabricated to investigate its electrical characteristics and conductive filament (CF) dynamics. The device exhi...

Dai-Yang Jiang, Zi-Hao Yan, Chang Cao et al. · Journal of Physical Chemistr... · 0 citations

Open access Aug 2026

Machine learning modeling reveals unconventional nucleation mechanism in phase‐change material GeTe

GeTe, a prototypical phase‐change material, has attracted pronounced attention for next‐generation storage and neuromorphic computing, yet its nucleation mechanism remains an ongoing pursuit. The challenge stems from the limited scales of conventional simulations and the intrinsic structural disorder of nucleation. To...

Siqi Tang, Qundao Xu, Shaojie Yuan et al. · InfoScience · 0 citations