Oct 2026
4-Transistor IGZO Ternary Content Addressable Memory Enabling Large-Scale Array Integration for In-Memory Computing
We report a 4-transistor (4T) Ternary Content Addressable Memory (TCAM) that significantly reduces the physical footprint by employing dual-gate IGZO transistors. High-density TCAMs are essential components for memory augmented neural networks and advanced computing systems; however, the large physical footprint remain...
Taewon Seo, Taejun Ha, Seunghyun Son et al.
· IEEE Electron Device Letters · 0 citations