Transverse thermoelectric phenomena are often considered as an alternative strategy for improving thermoelectric performance beyond standard longitudinal Seebeck response. Here, we show that the semimetallic compound is a rare example of a material in which transverse thermopower arises from two different mechanisms. In zero magnetic field, this response may originate from axis‐dependent conduction polarity (ADCP), which is confirmed in by the observation of Seebeck coefficients of opposite signs along two crystallographic directions, in agreement with theoretical predictions. The presence of ADCP is further reflected in Hall effect measurements performed along the same crystallographic directions. In applied magnetic field, a second mechanism becomes operative. The combination of nearly perfect charge carrier compensation, high carrier mobility and possibly phonon‐drag effect generates a pronounced Nernst thermopower and Nernst power factor ( and at K and T). As these characteristics are not unique to , our results expand the range of materials in which large Nernst effect and ADCP may coexist, providing new opportunities to optimize transverse thermoelectric performance.
Transverse thermoelectric conversion, in which charge and heat currents are interconverted in orthogonal directions, has recently attracted increasing attention as an alternative to conventional longitudinal thermoelectric conversion. Although transverse Seebeck effect has been investigated in various materials, its re...
Aina Sakamoto, Shoya Ohsumi, Shogo Yoshida et al.· 0 citations
As a class of two-dimensional materials, MBenes have attracted increasing interest due to their high electrical conductivity. Using first-principles calculations combined with the Boltzmann transport equation, we investigate the intrinsic charge transport in orthorhombic 5d-based Hf2B2. The room-temperature 2D conduc...
The efficiency of energy conversion through the thermoelectric effect has increased significantly due to recent advances in nanostructuring techniques as well as potential use of low-dimensional materials. In this work, we theoretically study the electronic transport, thermoelectric effect and tunnel magnetoresistance...
E. J. Guzmán, O. Navarro, O. Oubram et al.· Physica Scripta· 0 citations
Thermoelectric materials must have a balance of high electronic conductivity and low thermal conductivity. Doping is one approach to achieve this goal, both to enhance electronic conductivity and suppress thermal transport. Because it has these multiple effects, however, it can both increase or reduce thermoelectric ef...
José L. Godínez Castellanos, N. Ginsberg, K. Kovnir et al.· Physical Chemistry of Semico...· 0 citations
Two-dimensional (2D) semiconductors with atomic thickness have shown great potential for application in high-performance microelectronic devices due to the lack of short channel effects, but their carrier mobility is often limited by strong electron-phonon coupling (EPC) compared to that of three-dimensional (3D) semic...
Ferroelectrics exhibiting volumetric thermal stability are essential for thermal-shock-resistance device applications. However, due to the crucial contribution of spontaneous volume ferroelectrostriction (SVFS) to lattice expansion, the coexistence of strong ferroelectricity and zero thermal expansion (ZTE) is difficul...
Pei-Xi Zhang, Qiang Li, Hao-Yu Wang et al.· Chemical Science· 0 citations
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